型号 | 品牌 | 封装 | 数量 | 描述 | 参数 | PDF资料 |
---|---|---|---|---|---|---|
ALD110904PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 108 | MOSFET N-CH 10.6V DUAL 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110904SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 36 | MOSFET N-CH 10.6V DUAL 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110908APAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 97 | MOSFET N-CH 10.6V DUAL 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110908ASAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 90 | MOSFET N-CH 10.6V DUAL 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110908PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 61 | MOSFET N-CH 10.6V DUAL 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110908SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 72 | MOSFET N-CH 10.6V DUAL 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110914PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 63 | MOSFET N-CH 10.6V DUAL 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD110914SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 87 | MOSFET N-CH 10.6V DUAL 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD1110EPAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | MOSFET N-CH ADJ DUAL 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | ||
ALD1110ESAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | MOSFET N-CH ADJ DUAL 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | ||
ALD1115MAL | Advanced Linear Devices Inc | 8-TSSOP,8-MSOP(0.118",3.00mm 宽) | MOSFET N/P-CH 13.2V 8MSOP | FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1... | ||
ALD1115PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 150 | MOSFET N/P-CH 13.2V 8PDIP | FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1... | |
ALD1115SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 50 | MOSFET N/P-CH 13.2V 8SOIC | FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1... | |
ALD1116PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 52 | MOSFET 2N-CH 13.2V 4.8MA 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD1116SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 891 | MOSFET 2N-CH 13.2V 4.8MA 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD1117PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 157 | MOSFET 2P-CH 13.2V 2MA 8PDIP | FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD1117SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 52 | MOSFET 2P-CH 13.2V 2MA 8SOIC | FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD111933MAL | Advanced Linear Devices Inc | 8-TSSOP,8-MSOP(0.118",3.00mm 宽) | 48 | MOSFET 2N-CH 10.6V 8MSOP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD111933PAL | Advanced Linear Devices Inc | 8-DIP(0.300",7.62mm) | 46 | MOSFET 2N-CH 10.6V 8PDIP | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... | |
ALD111933SAL | Advanced Linear Devices Inc | 8-SOIC(0.154",3.90mm 宽) | 100 | MOSFET 2N-CH 10.6V 8SOIC | FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss... |