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首页 > 元器件分类 > 分离式半导体产品 > FET - 阵列 A开头
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型号 品牌 封装 数量 描述 参数 PDF资料
ALD110904PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 108 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110904SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 36 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908APAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 97 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908ASAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 90 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 61 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 72 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110914PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 63 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110914SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 87 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1110EPAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) MOSFET N-CH ADJ DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1110ESAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) MOSFET N-CH ADJ DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1115MAL Advanced Linear Devices Inc 8-TSSOP,8-MSOP(0.118",3.00mm 宽) MOSFET N/P-CH 13.2V 8MSOP FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1...
ALD1115PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 150 MOSFET N/P-CH 13.2V 8PDIP FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1...
ALD1115SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 50 MOSFET N/P-CH 13.2V 8SOIC FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1...
ALD1116PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 52 MOSFET 2N-CH 13.2V 4.8MA 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1116SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 891 MOSFET 2N-CH 13.2V 4.8MA 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1117PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 157 MOSFET 2P-CH 13.2V 2MA 8PDIP FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1117SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 52 MOSFET 2P-CH 13.2V 2MA 8SOIC FET 型:2 P 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD111933MAL Advanced Linear Devices Inc 8-TSSOP,8-MSOP(0.118",3.00mm 宽) 48 MOSFET 2N-CH 10.6V 8MSOP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD111933PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 46 MOSFET 2N-CH 10.6V 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD111933SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 100 MOSFET 2N-CH 10.6V 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...

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