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首页 > 元器件分类 > 分离式半导体产品 > FET - 阵列 A开头
元件索引: A B C D E F G H I L M N P Q R S T U V W X Z 2
型号 品牌 封装 数量 描述 参数 PDF资料
ALD110800PCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 9 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110800SCL Advanced Linear Devices Inc 16-SOIC(0.154",3.90mm 宽) 37 MOSFET N-CH 10.6V QUAD 16SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110802PCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 15 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110802SCL Advanced Linear Devices Inc 16-SOIC(0.154",3.90mm 宽) 81 MOSFET N-CH 10.6V QUAD 16SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110804PCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 15 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110804SCL Advanced Linear Devices Inc 16-SOIC(0.154",3.90mm 宽) 82 MOSFET N-CH 10.6V QUAD 16SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110808APCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 40 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110808ASCL Advanced Linear Devices Inc 16-SOIC(0.154",3.90mm 宽) 96 MOSFET N-CH 10.6V QUAD 16SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110808PCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 20 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110808SCL Advanced Linear Devices Inc 16-SOIC(0.154",3.90mm 宽) 67 MOSFET N-CH 10.6V QUAD 16SOIC FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110814PCL Advanced Linear Devices Inc 16-DIP(0.300",7.62mm) 39 MOSFET N-CH 10.6V QUAD 16PDIP FET 型:4 N 沟道,配对 FET 特点:标准 漏极至源极电压(Vdss):...
ALD110902PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 111 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110902SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 50 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110904PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 108 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110904SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 36 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908APAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 97 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908ASAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 90 MOSFET N-CH 10.6V DUAL 8SOIC FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD110908PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 61 MOSFET N-CH 10.6V DUAL 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...
ALD1115SAL Advanced Linear Devices Inc 8-SOIC(0.154",3.90mm 宽) 50 MOSFET N/P-CH 13.2V 8SOIC FET 型:N 和 P 沟道 FET 特点:标准 漏极至源极电压(Vdss):1...
ALD1116PAL Advanced Linear Devices Inc 8-DIP(0.300",7.62mm) 52 MOSFET 2N-CH 13.2V 4.8MA 8PDIP FET 型:2 N 沟道(双)配对 FET 特点:标准 漏极至源极电压(Vdss...

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