型号 |
品牌 |
封装 |
数量 |
描述 |
参数 |
PDF资料 |
BB207,235 |
NXP Semiconductors
|
TO-236-3,SC-59,SOT-23-3 |
|
DIODE FM VAR CAP DUAL SOT23 |
电容@ Vr, F:26.3pF @ 8V,1MHz
电容比:3.3
电容比条件... |
|
BB208-02,115 |
NXP Semiconductors
|
SC-79,SOD-523 |
|
DIODE VAR CAP 10V 20MA SOD523 |
电容@ Vr, F:5.4pF @ 7.5V,1MHz
电容比:5.2
电容比条... |
|
BB208-02,135 |
NXP Semiconductors
|
SC-79,SOD-523 |
|
DIODE VAR CAP 10V 20MA SOD523 |
电容@ Vr, F:5.4pF @ 7.5V,1MHz
电容比:5.2
电容比条... |
|
BB208-03,115 |
NXP Semiconductors
|
SC-76,SOD-323 |
57000 |
DIODE VAR CAP 10V SOD-323 |
电容@ Vr, F:5.4pF @ 7.5V,1MHz
电容比:5.2
电容比条... |
|
BB208-03,135 |
NXP Semiconductors
|
SC-76,SOD-323 |
|
DIODE VAR CAP 10V 20MA SOD323 |
电容@ Vr, F:5.4pF @ 7.5V,1MHz
电容比:5.2
电容比条... |
|
BB639E7908 |
Infineon Technologies
|
SC-76,SOD-323 |
|
DIODE VARACTOR 30V SOD-323 |
电容@ Vr, F:2.9pF @ 28V,1MHz
电容比:14.7
电容比条... |
|
BB804,215 |
NXP Semiconductors
|
TO-236-3,SC-59,SOT-23-3 |
|
DIODE VHF VAR CAP DUAL SOT23 |
电容@ Vr, F:46.5pF @ 2V,1MHz
电容比:1.75
电容比条... |
|
BBY31,215 |
NXP Semiconductors
|
TO-236-3,SC-59,SOT-23-3 |
|
DIODE UHF VAR CAP 30V SOT-23 |
电容@ Vr, F:2pF @ 28V,1MHz
电容比:8.3
电容比条件:C... |
|
BBY40,215 |
NXP Semiconductors
|
TO-236-3,SC-59,SOT-23-3 |
18000 |
DIODE VHF VAR CAP 30V SOT-23 |
电容@ Vr, F:6pF @ 25V,1MHz
电容比:6.5
电容比条件:C... |
|
BBY40,235 |
NXP Semiconductors
|
TO-236-3,SC-59,SOT-23-3 |
|
DIODE VHF VAR CAP 30V SOT23 |
电容@ Vr, F:6pF @ 25V,1MHz
电容比:6.5
电容比条件:C... |
|
BBY40TA |
Diodes Inc
|
TO-236-3,SC-59,SOT-23-3 |
1034 |
DIODE VARI CAP 28V 330MW SOT23-3 |
电容@ Vr, F:6pF @ 25V,1MHz
电容比:6.5
电容比条件:C... |
|
BBY51-02LE6327 |
Infineon Technologies
|
2-SMD,无引线 |
|
DIODE TUNING 7V 20MA TSLP-2 |
电容@ Vr, F:3.7pF @ 4V,1MHz
电容比:2.2
电容比条件:... |
|
BBY51-02WE6327 |
Infineon Technologies
|
SC-80 |
|
DIODE TUNING 7V 20MA SCD-80 |
电容@ Vr, F:3.7pF @ 4V,1MHz
电容比:2.2
电容比条件:... |
|
BBY51-02WH6327 |
Infineon Technologies
|
SC-80 |
|
DIODE TUNING 7V 20MA SCD80 |
电容@ Vr, F:3.7pF @ 4V,1MHz
电容比:2.2
电容比条件:... |
|
BBY51-03WE6327 |
Infineon Technologies
|
SC-76,SOD-323 |
|
DIODE TUNING 7V 20MA SOD-323 |
电容@ Vr, F:3.7pF @ 4V,1MHz
电容比:2.2
电容比条件:... |
|
BBY51E6327 |
Infineon Technologies
|
TO-236-3,SC-59,SOT-23-3 |
|
DIODE TUNING 7V 20MA SOT-23 |
电容@ Vr, F:3.7pF @ 4V,1MHz
电容比:2.2
电容比条件:... |
|
BBY51E6433 |
Infineon Technologies
|
TO-236-3,SC-59,SOT-23-3 |
|
DIODE TUNING 7V 20MA SOT-23 |
电容@ Vr, F:3.7pF @ 4V,1MHz
电容比:2.2
电容比条件:... |
|
BBY52-02LE6327 |
Infineon Technologies
|
2-SMD,无引线 |
|
DIODE TUNING 7V 20MA TSLP-2 |
电容@ Vr, F:1.45pF @ 4V,1MHz
电容比:2.1
电容比条件... |
|
BBY52-02LE6816 |
Infineon Technologies
|
2-SMD,无引线 |
|
DIODE TUNING 7V 20MA TSLP-2 |
电容@ Vr, F:1.45pF @ 4V,1MHz
电容比:2.1
电容比条件... |
|
BBY52-02WE6327 |
Infineon Technologies
|
SC-80 |
|
DIODE TUNING 7V 20MA SCD-80 |
电容@ Vr, F:1.45pF @ 4V,1MHz
电容比:2.1
电容比条件... |
|